Rare and Precious metal
GST Target
Classification:
Sputtering target
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Product Details
GeSbTe is a phase change storage material. Phase change memory (PCM) based on germanium antimony telluride shows significant commercialization potential. It is an alternative memory technology for NOR flash memory and some DRAM markets. Potential future new semiconductor memory chip technology.
Product performance
|
Composition |
Ge,Sb,Te(Different atomic ratio) |
|
Purity |
99.99% |
|
Density |
>6.38g/cm3 |
|
Size |
50.8mm - 440mm |
|
Tolerance |
Diameter:±0.1mm,Thickness:±0.1mm |
| Roughness |
32RMS |
Product Message
Contact Information
Address: Building D1, Independent Pioneer Park, Tianyi Science and Technology City, 128 Chuangye Avenue, Zhuzhou City, Hunan Province
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