GST Target


Composition: Ge, Sb, Te (different atomic ratio);Purity: 99.9%;Size: 50.8mm-440mm

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Classification:

Sputtering target


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Accessories:


Product Details

GeSbTe is a phase change storage material. Phase change memory (PCM) based on germanium antimony telluride shows significant commercialization potential. It is an alternative memory technology for NOR flash memory and some DRAM markets. Potential future new semiconductor memory chip technology.

 

Product performance

Composition

Ge,Sb,Te(Different atomic ratio)

Purity

99.99%

Density

>6.38g/cm3

Size

50.8mm - 440mm

Tolerance

Diameter:±0.1mm,Thickness:±0.1mm

Roughness

32RMS


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